ION BEAM DEPOSITION (IBD) TECHNOLOGY

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Content

Ion beam deposition (IBD) provides control and repeatability for depositing a broad range of materials from dielectrics to metals, and everything in between. With such capability, the applications are extensive and include films for optics (antireflection coatings, filters, mirrors) and critical films for nonvolatile memory devices (MRAM) and magnetic transducers (thin-film read/write heads). With multiple targets, a complex film stack with angstrom-scale thick layers is possible.

The heart of the system is like ion beam etching: a plasma-driven ion source (usually driven inductively) with the Ar ions extracted and accelerated through a series of biased grids that can gently focus the beam. In IBD, the ions physically sputter material from a target to deposit it on the substrate. As with IBE, the substrate can be tilted and rotated for added flexibility. Ion-assisted deposition, where a second ion beam source is directed at the substrate where the film is being deposited, is a valuable optional capability. This makes it possible to influence film properties and even pattern structures using the tilt and rotate parameters. This multitude of features makes IBD a power approach to thin-film deposition.

Beam Targeting

In an IBD system, a biased grid assembly focuses a broad-beam ion source on a target. The ion beam strikes the target, causing the target material to be sputtered and then deposited on the substrate. 

Multiple Materials

A multi-target turret allows for the deposition of multiple materials without moving the substrate out of the vacuum environment. Advanced shielding avoids cross contamination. 

Multiple Parameters

IBD allows for control of multiple parameters, including ion energy, flux, species, and angle of incidence.

Independent Controls

Nearly independent control of these parameters is possible, which is a significant advantage for IBD over other sputtering methods.

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