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Technologies
Plasma-Therm offers a range of technologies for the etching and deposition of a variety of different materials.
Etch
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ICP—Inductively Coupled Plasma uses an RF powered coil in conjunction with an RF biased substrate electrode.
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RIE—Reactive Ion Etching uses a parallel plate configuration with an RF biased substrate electrode.
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DSE—Deep Silicon Etch is a specialized form of ICP that combines etching and deposition in a time division multiplexed mode allowing for the production of deep straight-wall features in silicon and SOI substrates.
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ME—Mask Etching systems are another specialized form of ICP that requires highly advanced controls of parameters such as critical dimensions (CD).
Deposition
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PECVD—Plasma Enhanced Chemical Vapor Deposition runs in parallel plate mode with RF power applied to the upper electrode.
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HDPCVD—High Density Plasma Chemical Vapor Deposition combines the advantages of a high density plasma ICP source with PECVD allowing for the extension of deposition technology to significantly lower temperatures and better higher density films.
Process Controls
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