KOBUS products using F.A.S.T. & PECVD technologies

KOBUS

The Plasma-Therm KOBUS product line offers a dedicated solution for single wafer deposition utilizing F.A.S.T. and PECVD technologies for both R&D and production customers.

Fast Atomic Sequential Technology (F.A.S.T.®)

Based on proprietary CVD reactor design, combined with pulsed capability, KOBUS is optimal for thick and conformal layer deposition and offers new solutions for 3D integration challenges.

At the crossroads of CVD and ALD deposition techniques, F.A.S.T.® delivers:

  • Unique film properties
  • Best in class solution for Thick and Conformal layers
  • ALD film performance at CVD speed

Click here for more information about F.A.S.T. technology.

PECVD Technology

KOBUS has also developed mature process deposition solutions:

  • KOBUS Silane     
    - Oxide/Nitride/Oxynitride/a-Si/µc-Si/a-SiC (Doped & Undoped)
    - From thick to very thin (µm’s to 10’s nm)
    - Easily tunable (Stress, RI, dielectric characteristics)
    - Plasma enhanced used for clean & pre/post treatment
    - Optional RPS cleaning system (based on NF3/Ar)
  • KOBUS TEOS
    - Oxide (Doped and Un-doped)
    - Doped layer for conformal film/buffer application
    - Direct Liquid Injection for precursors (w/o bubbling)
    - Plasma enhanced used for clean & pre/post treatment

 

 

 
 
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