Plasma dicing changes the dynamics of singulating die by avoiding the sequential cutting processing of saw blades and lasers and offering a parallel approach in which all the die are separated simultaneously. This reduces dicing cost and improves die quality.
Replacing saw blades with dry etching technology based on inductively coupled plasma reactive ion etching (ICP RIE) means that dies can be moved closer together to save valuable wafer real estate. As die get smaller, using traditional saw technology requires more streets, which takes more time and consumes more of the wafer. Additionally, sawing smaller die increases the potential for microcracks and reduces die strength. This all contributes to lower die yield per wafer.
Modern applications are moving towards thinner wafers to enable more technology in smaller volumes. Plasma dicing, with gentle but high-speed etching, makes an impact on advanced packaging. Several approaches are available for plasma dicing, and all are suitable for thick or thin wafers.
Wafers are mounted on dicing tape using well-accepted practices and then loaded into the plasma dicing system for singulation.
In this embodiment, wafers are temporarily mounted to a carrier before being loaded into the plasma dicing system for singulation.
With PDBG technology, the streets are etched before the wafers are mounted onto the dicing tape. After etching the streets, the wafers are flipped, mounted to dicing tape and tape frame, and then thinned, either with grinding or with plasma.
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