Deep Silicon Etching and Deep Reactive Ion Etching (ICP-DSE™/DRIE)

FOR A SMOOTHER SURFACE, EXCELLENT SELECTIVITY AND ETCH DEPTHS GREATER THAN 100 µm

Some of your processes, including those for MEMS and nanotechnology applications, require features with relatively high aspect ratios and anisotropic profiles created in silicon. You can accomplish this using ICP-configured Deep Silicon Etching (DSE). DSE is available on our VERSALINE® platform and Mask Etcher® platform. Our CORIAL platform uses a similar process known as Deep Reactive Ion Etching (ICP-DRIE).

Our ICP-enabled process modules give you the widest process latitude, high mask selectivity, low SOI notching, and fast process switching. You also get high etch rate, superior profile control, a smoother surface, and excellent selectivity for etch depths greater than 100 µm.

Micro-Structures

DSE is routinely used for MEMS manufacturing to create deep micro-structures with high aspect ratios.

Etching Other Materials

Besides silicon, several hard-to-etch materials like glass, quartz, silicon carbide, and lithium tantalate, appeal to designers in the MEMS and packaging industries.

Control

DSE/DRIE is possible through equipment that can achieve high density of reactive species and independent control of ion current and ion energy.

Faster and Deeper

The key differentiation between DSE/DRIE and conventional ICP-RIE, is that DSE/DRIE enables faster etch rates and the formation of deep etch structures.

OUR DSE PRODUCTS

EXPLORE TECHNICAL PAPERS

Want to learn more about this topic? Click here to review technical papers on DSE/DRIE etch principles, practices and outcomes.

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