The wireless market, dominated by compound semiconductor materials,
is primarily comprised of power amplifier transistors (heterojunction bipolar transistors)
and high-speed switches (high electron mobility transistors). This market continues to
grow as the demand for cellular handsets continues to increase.
Using Inductively Couple Plasma (ICP) technology and Plasma Enhanced
Chemical Vapor Deposition (PECVD), Plasma-Therm has etch and deposition technology for
the full range of compound semiconductor materials used in devices for the wireless market.
As a market leader, Plasma-Therm has provided solutions for R&D through high volume
manufacturing. Among the array of processes to produce HBTs and HEMTs are low damage
gate opening, high-rate backside via etching and low-stress silicon nitride deposition.
Reproducibility for a production environment is provided with
Plasma-Therm’s actively controlled ICP heated process module and an integrated
endpoint system. The endpoint system, known as EndpointWorks™, is capable of working
with laser interferometry, optical emission spectroscopy and other inputs.
- GaAs via — high rate with profile control.
- InP via — high rate with profile control
- GaAs-based mesa etching
- SiNx low-damage gate etching
Low-damage SiNx gate opening is accomplished with low-power processes
appropriate for damage-sensitive compound semiconductors such as GaAs and InGaAs.
The fastest backside via etch rate with profile control is available
with the VERSALINE. Electrostatic clamping of unmetallized sapphire carriers
provides the advantage of better thermal performance with minimal edge exclusion. Plasma-Therm
leads the development of pillar-free vias.
• Deposition — low-stress, low-damage PECVD of
- Interlayer dielectric
With Plasma-Therm’s advanced PECVD helium dilution technology,
stress-controlled silicon nitride films can be deposited without the device damage associated
with the use of low frequency.
• Wafer Singulation