Product solutions for wireless applications


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The wireless market continues to grow with the popularity of smartphones and tablets, and the increasing adoption of wirelessly connected products such as smart watches, fitness wearables, "smart" TVs and appliances, and other types of devices in the expanding "Internet of Things."

The wireless market is dominated by compound semiconductor materials. Compound semiconductors are used in digital, analog, and mixed ICs, including radio, power, and other high-frequency circuits that use heterojunction bipolar transistors (HBT), high-electron-mobility transistors (HEMTs), surface acoustic wave (SAW), and bulk acoustic wave (BAW) devices.

With plasma etch, deposition, and ion beam tools, Plasma-Therm systems support the full range of compound semiconductor materials used in devices for the wireless market.

Supported applications for HBTs and HEMTs:

  • Low-damage gate opening
  • High-rate backside via etching
  • Deposition of low-stress silicon nitride

Reproducibility for a production environment is provided with Plasma-Therm’s actively controlled ICP heated process module and an integrated endpoint system. The endpoint system, known as EndpointWorks™, is capable of working with laser interferometry, optical emission spectroscopy and other inputs.

Typical applications

• Etch

  • GaAs via — high rate with profile control.
  • InP via — high rate with profile control
  • GaAs-based mesa etching
  • SiNx low-damage gate etching

Low-damage SiNx gate opening is accomplished with low-power processes appropriate for damage-sensitive compound semiconductors such as GaAs and InGaAs.

The fastest backside via etch rate with profile control is available with the VERSALINE®. Electrostatic clamping of unmetallized sapphire carriers provides the advantage of better thermal performance with minimal edge exclusion. Plasma-Therm leads the development of pillar-free vias.

• Deposition — low-stress, low-damage PECVD of SiNx

  • Capacitors
  • Encapsulation
  • Passivation
  • Interlayer dielectric

With Plasma-Therm’s advanced PECVD helium dilution technology, stress-controlled silicon nitride films can be deposited without the device damage associated with the use of low frequency.

• Wafer Singulation

•Ion beam

Pinnacle™ ion beam etch and deposition technology provides the highest uniformity, repeatability, and lowest cost of ownership for SAW and BAW applications.



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